CSD19533Q5A MOSFET

CSD19533Q5A CSD19533Q5A

CSD19533Q5A MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD19533Q5A
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.4 V
  • Maximum Drain Current: 13 A
  • Drain-Source Capacitance: 395 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 6 nS
  • Maximum Drain-Source On-State Resistance: 0.0094 Ohm
  • Total Gate Charge: 27 nC
  • Maximum Power Dissipation: 3.2 W
  • Package: SON5x6