CSD19536KCS MOSFET

CSD19536KCS CSD19536KCS
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CSD19536KCS MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD19536KCS
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.2 V
  • Maximum Drain Current: 150 A
  • Drain-Source Capacitance: 1820 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 14 nS
  • Maximum Drain-Source On-State Resistance: 0.0027 Ohm
  • Total Gate Charge: 118 nC
  • Maximum Power Dissipation: 375 W
  • Package: TO-220

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