CSD19536KTT MOSFET

CSD19536KTT CSD19536KTT

CSD19536KTT MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD19536KTT
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.2 V
  • Maximum Drain Current: 200 A
  • Drain-Source Capacitance: 1820 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 8 nS
  • Maximum Drain-Source On-State Resistance: 0.0024 Ohm
  • Total Gate Charge: 118 nC
  • Maximum Power Dissipation: 375 W
  • Package: D2PAK