CSD19537Q3 MOSFET

CSD19537Q3 CSD19537Q3
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CSD19537Q3 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD19537Q3
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.6 V
  • Maximum Drain Current: 9.7 A
  • Drain-Source Capacitance: 251 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 3 nS
  • Maximum Drain-Source On-State Resistance: 0.0145 Ohm
  • Total Gate Charge: 16 nC
  • Maximum Power Dissipation: 2.8 W
  • Package: SON3.3x3.3

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