CSD25211W1015 MOSFET

CSD25211W1015 CSD25211W1015
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CSD25211W1015 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD25211W1015
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 6 V
  • Maximum Gate-Threshold Voltage: 1.1 V
  • Maximum Drain Current: 3.2 A
  • Drain-Source Capacitance: 234 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 8.8 nS
  • Maximum Drain-Source On-State Resistance: 0.033 Ohm
  • Total Gate Charge: 3.4 nC
  • Maximum Power Dissipation: 1 W
  • Package: WLP1.0x1.5

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