CSD25213W10 MOSFET

CSD25213W10 CSD25213W10

CSD25213W10 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD25213W10
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 6 V
  • Maximum Gate-Threshold Voltage: 1.1 V
  • Maximum Drain Current: 1.6 A
  • Drain-Source Capacitance: 148 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 520 nS
  • Maximum Drain-Source On-State Resistance: 0.047 Ohm
  • Total Gate Charge: 2.2 nC
  • Maximum Power Dissipation: 1 W
  • Package: DSBGA