CSD25302Q2 MOSFET

CSD25302Q2 CSD25302Q2
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CSD25302Q2 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD25302Q2
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 8 V
  • Maximum Gate-Threshold Voltage: 0.9 V
  • Maximum Drain Current: 5 A
  • Drain-Source Capacitance: 120 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 13.2 nS
  • Maximum Drain-Source On-State Resistance: 0.049 Ohm
  • Total Gate Charge: 2.6 nC
  • Maximum Power Dissipation: 2.4 W
  • Package: SON2x2

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