CSD25401Q3 MOSFET

CSD25401Q3 CSD25401Q3
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CSD25401Q3 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD25401Q3
  • Type of Control Channel: P -Channel
  • Maximum Drain-Source Voltage: 20 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Gate-Threshold Voltage: 1.4 V
  • Maximum Drain Current: 13.6 A
  • Drain-Source Capacitance: 560 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 3.9 nS
  • Maximum Drain-Source On-State Resistance: 0.0115 Ohm
  • Total Gate Charge: 8.8 nC
  • Maximum Power Dissipation: 2.8 W
  • Package: QFN3.3X3.3

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