CSD86330Q3D MOSFET

CSD86330Q3D CSD86330Q3D
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CSD86330Q3D MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD86330Q3D
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 25 V
  • Maximum Gate-Source Voltage: 8 V
  • Maximum Gate-Threshold Voltage: 1.4 V
  • Maximum Drain Current: 20 A
  • Drain-Source Capacitance: 350 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 7.5 nS
  • Maximum Drain-Source On-State Resistance: 0.0088 Ohm
  • Total Gate Charge: 4.8 nC
  • Maximum Power Dissipation: 6 W
  • Package: SON3.3x3.3

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