CSD87312Q3E MOSFET

CSD87312Q3E CSD87312Q3E
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CSD87312Q3E MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD87312Q3E
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 10 V
  • Maximum Gate-Threshold Voltage: 1.3 V
  • Maximum Drain Current: 7 A
  • Drain-Source Capacitance: 190 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 16 nS
  • Maximum Drain-Source On-State Resistance: 0.033 Ohm
  • Total Gate Charge: 6.3 nC
  • Maximum Power Dissipation: 2.5 W
  • Package: SON3.3x3.3

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