CSD88539ND MOSFET

CSD88539ND CSD88539ND
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CSD88539ND MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSD88539ND
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.6 V
  • Maximum Drain Current: 6.3 A
  • Drain-Source Capacitance: 70 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 9 nS
  • Maximum Drain-Source On-State Resistance: 0.028 Ohm
  • Total Gate Charge: 7.2 nC
  • Maximum Power Dissipation: 2.1 W
  • Package: SO-8

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