CSI4N60 MOSFET

CSI4N60 CSI4N60

CSI4N60 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: CSI4N60
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Gate-Source Voltage: 30 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 4 A
  • Drain-Source Capacitance: 60 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 35 nS
  • Maximum Drain-Source On-State Resistance: 2.5 Ohm
  • Maximum Power Dissipation: 100 W
  • Package: TO-251

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