G29 MOSFET

G29
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G29 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: G29
  • Type of Control Channel: P -Channel
  • SMD Transistor Code: G29
  • Maximum Drain-Source Voltage: 18 V
  • Maximum Gate-Source Voltage: 12 V
  • Maximum Drain Current: 5.8 A
  • Drain-Source Capacitance: 290 pF
  • Maximum Operating Junction Temperature: 150 °C
  • Rise Time: 35 nS
  • Maximum Drain-Source On-State Resistance: 0.04 Ohm
  • Maximum Power Dissipation: 1.7 W
  • Package: SOT23