IPB009N03L MOSFET

IPB009N03L IPB009N03L
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IPB009N03L MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB009N03L
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: 009N03L
  • Maximum Drain-Source Voltage: 30 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2.2 V
  • Maximum Drain Current: 180 A
  • Drain-Source Capacitance: 5700 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 14 nS
  • Maximum Drain-Source On-State Resistance: 0.00095 Ohm
  • Total Gate Charge: 110 nC
  • Maximum Power Dissipation: 250 W
  • Package: TO-263-7

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