IPB010N06N MOSFET

IPB010N06N IPB010N06N
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IPB010N06N MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB010N06N
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: 010N06N
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.3 V
  • Maximum Drain Current: 180 A
  • Drain-Source Capacitance: 3400 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 36 nS
  • Maximum Drain-Source On-State Resistance: 0.001 Ohm
  • Total Gate Charge: 208 nC
  • Maximum Power Dissipation: 300 W
  • Package: TO-263-7

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