IPB011N04L MOSFET

IPB011N04L IPB011N04L
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IPB011N04L MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB011N04L
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: 011N04L
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 2 V
  • Maximum Drain Current: 180 A
  • Drain-Source Capacitance: 4100 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 13 nS
  • Maximum Drain-Source On-State Resistance: 0.0011 Ohm
  • Maximum Power Dissipation: 250 W
  • Package: TO-263-7

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