IPB014N06N MOSFET

IPB014N06N IPB014N06N
TransistorData.com is not an official representative or the creator of the MOSFET IPB014N06N Transistor. Copyrighted materials belong to their respective owners. Please Note: Users can download the official IPB014N06N transistor datasheet in PDF, pin diagram, pnp pinout circuit and equivalent transistor data.

IPB014N06N MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB014N06N
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: 014N06N
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.3 V
  • Maximum Drain Current: 180 A
  • Drain-Source Capacitance: 1800 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 18 nS
  • Maximum Drain-Source On-State Resistance: 0.0014 Ohm
  • Total Gate Charge: 106 nC
  • Maximum Power Dissipation: 214 W
  • Package: TO-263-7

Top IPB014N06N Equivalent Transistors