IPB027N10N3G MOSFET

IPB027N10N3G IPB027N10N3G

IPB027N10N3G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB027N10N3G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Drain Current: 120 A
  • Maximum Drain-Source On-State Resistance: 0.0027 Ohm
  • Total Gate Charge: 155 nC
  • Maximum Power Dissipation: 300 W
  • Package: D2PAK_TO263