IPB048N06LG MOSFET

IPB048N06LG IPB048N06LG
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IPB048N06LG MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB048N06LG
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Drain Current: 100 A
  • Maximum Drain-Source On-State Resistance: 0.0044 Ohm
  • Total Gate Charge: 225 nC
  • Maximum Power Dissipation: 300 W
  • Package: D2PAK_TO263

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