IPB049NE7N3G MOSFET

IPB049NE7N3G IPB049NE7N3G

IPB049NE7N3G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB049NE7N3G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 75 V
  • Maximum Drain Current: 80 A
  • Maximum Drain-Source On-State Resistance: 0.0049 Ohm
  • Total Gate Charge: 51 nC
  • Maximum Power Dissipation: 150 W
  • Package: D2PAK_TO263