IPB081N06L3G MOSFET

IPB081N06L3G IPB081N06L3G
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IPB081N06L3G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB081N06L3G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Drain Current: 50 A
  • Maximum Drain-Source On-State Resistance: 0.0084 Ohm
  • Total Gate Charge: 22 nC
  • Maximum Power Dissipation: 79 W
  • Package: D2PAK_TO263

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