IPB083N10N3G MOSFET

IPB083N10N3G IPB083N10N3G

IPB083N10N3G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB083N10N3G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Drain Current: 80 A
  • Maximum Drain-Source On-State Resistance: 0.0083 Ohm
  • Total Gate Charge: 42 nC
  • Maximum Power Dissipation: 125 W
  • Package: D2PAK_TO263