IPB097N08N3G MOSFET

IPB097N08N3G IPB097N08N3G

IPB097N08N3G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB097N08N3G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 80 V
  • Maximum Drain Current: 70 A
  • Maximum Drain-Source On-State Resistance: 0.0097 Ohm
  • Total Gate Charge: 26 nC
  • Maximum Power Dissipation: 100 W
  • Package: D2PAK_TO263