IPB100N04S3-03 MOSFET

IPB100N04S3-03 IPB100N04S3-03

IPB100N04S3-03 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB100N04S3-03
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 100 A
  • Maximum Operating Junction Temperature: 175 °C
  • Maximum Drain-Source On-State Resistance: 0.0025 Ohm
  • Total Gate Charge: 145 nC
  • Maximum Power Dissipation: 214 W
  • Package: PGTO263