IPB100N04S4-H2 MOSFET

IPB100N04S4-H2 IPB100N04S4-H2

IPB100N04S4-H2 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB100N04S4-H2
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Drain Current: 100 A
  • Maximum Drain-Source On-State Resistance: 0.0024 Ohm
  • Total Gate Charge: 90 nC
  • Maximum Power Dissipation: 115 W
  • Package: PGTO263