IPB100N08S2L-07 MOSFET

IPB100N08S2L-07 IPB100N08S2L-07

IPB100N08S2L-07 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB100N08S2L-07
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 75 V
  • Maximum Drain Current: 100 A
  • Maximum Drain-Source On-State Resistance: 0.0065 Ohm
  • Total Gate Charge: 246 nC
  • Maximum Power Dissipation: 300 W
  • Package: PTO263