IPB100N10S3-05 MOSFET

IPB100N10S3-05 IPB100N10S3-05

IPB100N10S3-05 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB100N10S3-05
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 100 A
  • Maximum Operating Junction Temperature: 175 °C
  • Maximum Drain-Source On-State Resistance: 0.0048 Ohm
  • Total Gate Charge: 176 nC
  • Maximum Power Dissipation: 300 W
  • Package: PGTO263