IPB120N04S4-02 MOSFET

IPB120N04S4-02 IPB120N04S4-02

IPB120N04S4-02 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB120N04S4-02
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Drain Current: 120 A
  • Maximum Drain-Source On-State Resistance: 0.0018 Ohm
  • Total Gate Charge: 134 nC
  • Maximum Power Dissipation: 158 W
  • Package: PGTO263