IPB120N04S4-02 MOSFET


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IPB120N04S4-02 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: IPB120N04S4-02
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 40 V
- Maximum Drain Current: 120 A
- Maximum Drain-Source On-State Resistance: 0.0018 Ohm
- Total Gate Charge: 134 nC
- Maximum Power Dissipation: 158 W
- Package: PGTO263