IPB120N06S4-02 MOSFET
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IPB120N06S4-02 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: IPB120N06S4-02
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 60 V
- Maximum Drain Current: 120 A
- Maximum Drain-Source On-State Resistance: 0.0024 Ohm
- Total Gate Charge: 195 nC
- Maximum Power Dissipation: 188 W
- Package: PGTO263