IPB120N06S4-H1 MOSFET

IPB120N06S4-H1 IPB120N06S4-H1

IPB120N06S4-H1 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB120N06S4-H1
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Drain Current: 120 A
  • Maximum Drain-Source On-State Resistance: 0.002 Ohm
  • Total Gate Charge: 270 nC
  • Maximum Power Dissipation: 250 W
  • Package: PGTO263