IPB123N10N3G MOSFET

IPB123N10N3G IPB123N10N3G
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IPB123N10N3G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB123N10N3G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Drain Current: 58 A
  • Maximum Drain-Source On-State Resistance: 0.0123 Ohm
  • Total Gate Charge: 26 nC
  • Maximum Power Dissipation: 94 W
  • Package: D2PAK_TO263

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