IPB160N04S3-H2 MOSFET

IPB160N04S3-H2 IPB160N04S3-H2

IPB160N04S3-H2 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB160N04S3-H2
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 160 A
  • Maximum Operating Junction Temperature: 175 °C
  • Maximum Drain-Source On-State Resistance: 0.0021 Ohm
  • Total Gate Charge: 145 nC
  • Maximum Power Dissipation: 214 W
  • Package: PGTO263