IPB160N04S4-H1 MOSFET
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IPB160N04S4-H1 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: IPB160N04S4-H1
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 40 V
- Maximum Drain Current: 160 A
- Maximum Drain-Source On-State Resistance: 0.0016 Ohm
- Maximum Power Dissipation: 167 W
- Package: PGTO263