IPB180N03S4L-01 MOSFET
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IPB180N03S4L-01 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: IPB180N03S4L-01
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 30 V
- Maximum Drain Current: 180 A
- Maximum Drain-Source On-State Resistance: 0.00105 Ohm
- Total Gate Charge: 239 nC
- Maximum Power Dissipation: 188 W
- Package: PGTO263