IPB180N04S3-02 MOSFET

IPB180N04S3-02 IPB180N04S3-02

IPB180N04S3-02 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB180N04S3-02
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 4 V
  • Maximum Drain Current: 180 A
  • Maximum Operating Junction Temperature: 175 °C
  • Maximum Drain-Source On-State Resistance: 0.0015 Ohm
  • Total Gate Charge: 210 nC
  • Maximum Power Dissipation: 300 W
  • Package: PGTO263