IPB180N04S4-01 MOSFET
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IPB180N04S4-01 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: IPB180N04S4-01
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 40 V
- Maximum Drain Current: 180 A
- Maximum Drain-Source On-State Resistance: 0.0013 Ohm
- Total Gate Charge: 176 nC
- Maximum Power Dissipation: 188 W
- Package: PGTO263