IPB180N04S4-H0 MOSFET
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IPB180N04S4-H0 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: IPB180N04S4-H0
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 40 V
- Maximum Drain Current: 180 A
- Maximum Drain-Source On-State Resistance: 0.0011 Ohm
- Total Gate Charge: 225 nC
- Maximum Power Dissipation: 250 W
- Package: PGTO263