IPB200N25N3G MOSFET
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IPB200N25N3G MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: IPB200N25N3G
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 250 V
- Maximum Drain Current: 64 A
- Maximum Drain-Source On-State Resistance: 0.02 Ohm
- Total Gate Charge: 64 nC
- Maximum Power Dissipation: 300 W
- Package: D2PAK_TO263