IPB60R125C6 MOSFET

IPB60R125C6 IPB60R125C6
TransistorData.com is not an official representative or the creator of the MOSFET IPB60R125C6 Transistor. Copyrighted materials belong to their respective owners. Please Note: Users can download the official IPB60R125C6 transistor datasheet in PDF, pin diagram, pnp pinout circuit and equivalent transistor data.

IPB60R125C6 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB60R125C6
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Drain Current: 30 A
  • Maximum Drain-Source On-State Resistance: 0.125 Ohm
  • Total Gate Charge: 96 nC
  • Maximum Power Dissipation: 219 W
  • Package: D2PAK_TO263

Top IPB60R125C6 Equivalent Transistors