IPB60R190C6 MOSFET

IPB60R190C6 IPB60R190C6
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IPB60R190C6 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB60R190C6
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Drain Current: 20.2 A
  • Maximum Drain-Source On-State Resistance: 0.19 Ohm
  • Total Gate Charge: 58 nC
  • Maximum Power Dissipation: 151 W
  • Package: D2PAK_TO263

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