IPB60R600C6 MOSFET

IPB60R600C6 IPB60R600C6

IPB60R600C6 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB60R600C6
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 600 V
  • Maximum Drain Current: 7.3 A
  • Maximum Drain-Source On-State Resistance: 0.6 Ohm
  • Total Gate Charge: 20.5 nC
  • Maximum Power Dissipation: 63 W
  • Package: D2PAK_TO263