IPB70N10S3-12 MOSFET

IPB70N10S3-12 IPB70N10S3-12

IPB70N10S3-12 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB70N10S3-12
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Drain Current: 70 A
  • Maximum Drain-Source On-State Resistance: 0.0113 Ohm
  • Total Gate Charge: 66 nC
  • Maximum Power Dissipation: 125 W
  • Package: PGTO263