IPB80N04S2-H4 MOSFET

IPB80N04S2-H4 IPB80N04S2-H4

IPB80N04S2-H4 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB80N04S2-H4
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 40 V
  • Maximum Drain Current: 80 A
  • Maximum Drain-Source On-State Resistance: 0.0037 Ohm
  • Total Gate Charge: 148 nC
  • Maximum Power Dissipation: 300 W
  • Package: PGTO263