IPB80N06S2-09 MOSFET

IPB80N06S2-09 IPB80N06S2-09

IPB80N06S2-09 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB80N06S2-09
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 55 V
  • Maximum Drain Current: 80 A
  • Maximum Drain-Source On-State Resistance: 0.0088 Ohm
  • Total Gate Charge: 80 nC
  • Maximum Power Dissipation: 190 W
  • Package: PGTO263