IPB80N06S2-H5 MOSFET

IPB80N06S2-H5 IPB80N06S2-H5

IPB80N06S2-H5 MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPB80N06S2-H5
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 55 V
  • Maximum Drain Current: 80 A
  • Maximum Drain-Source On-State Resistance: 0.0052 Ohm
  • Total Gate Charge: 155 nC
  • Maximum Power Dissipation: 300 W
  • Package: PGTO263