IPB80N06S2L-09 MOSFET
Sponsored links
TransistorData.com is not an official representative or the creator of the MOSFET IPB80N06S2L-09 Transistor. Copyrighted materials belong to their respective owners. Please Note: Users can download the official IPB80N06S2L-09 transistor datasheet in PDF, pin diagram, pnp pinout circuit and equivalent transistor data.
Sponsored links
IPB80N06S2L-09 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: IPB80N06S2L-09
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 55 V
- Maximum Drain Current: 80 A
- Maximum Drain-Source On-State Resistance: 0.0082 Ohm
- Total Gate Charge: 105 nC
- Maximum Power Dissipation: 190 W
- Package: PGTO263