IPB80N06S2L-H5 MOSFET
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IPB80N06S2L-H5 MOSFET Datasheet
- Type of Transistor: MOSFET
- Type Designator: IPB80N06S2L-H5
- Type of Control Channel: N -Channel
- Maximum Drain-Source Voltage: 55 V
- Maximum Gate-Source Voltage: 20 V
- Maximum Gate-Threshold Voltage: 2 V
- Maximum Drain Current: 80 A
- Maximum Operating Junction Temperature: 175 °C
- Maximum Drain-Source On-State Resistance: 0.0047 Ohm
- Total Gate Charge: 190 nC
- Maximum Power Dissipation: 300 W
- Package: PGTO263