IPD025N06N MOSFET

IPD025N06N IPD025N06N

IPD025N06N MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD025N06N
  • Type of Control Channel: N -Channel
  • SMD Transistor Code: 025N06N
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Gate-Source Voltage: 20 V
  • Maximum Gate-Threshold Voltage: 3.3 V
  • Maximum Drain Current: 90 A
  • Drain-Source Capacitance: 1200 pF
  • Maximum Operating Junction Temperature: 175 °C
  • Rise Time: 20 nS
  • Maximum Drain-Source On-State Resistance: 0.0025 Ohm
  • Maximum Power Dissipation: 167 W
  • Package: TO-252