IPD053N06N3G MOSFET

IPD053N06N3G IPD053N06N3G

IPD053N06N3G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD053N06N3G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 60 V
  • Maximum Drain Current: 90 A
  • Maximum Drain-Source On-State Resistance: 0.0053 Ohm
  • Total Gate Charge: 82 nC
  • Maximum Power Dissipation: 115 W
  • Package: DPAK_TO252