IPD082N10N3G MOSFET

IPD082N10N3G IPD082N10N3G
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IPD082N10N3G MOSFET Datasheet

  • Type of Transistor: MOSFET
  • Type Designator: IPD082N10N3G
  • Type of Control Channel: N -Channel
  • Maximum Drain-Source Voltage: 100 V
  • Maximum Drain Current: 80 A
  • Maximum Drain-Source On-State Resistance: 0.0082 Ohm
  • Total Gate Charge: 42 nC
  • Maximum Power Dissipation: 125 W
  • Package: DPAK_TO252

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